Study on NAND gate characteristic due to CMOS scaling using layout approach

Main Author: Syukri Othman
Language: English
Published: Bestari Jaya, Selangor: UNISEL, 2005.
Subjects:
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090 0 0 |a TK7871   |b .S98 2005 
100 0 |a Syukri Othman  
245 1 0 |a Study on NAND gate characteristic due to CMOS scaling using layout approach   |c Syukri bin Othman. 
260 |a Bestari Jaya, Selangor:   |b UNISEL,   |c 2005. 
300 |a xi, 73 p.:   |b col. ill.;   |c 30 cm. 
500 |a Please login MyLib (library.unisel.edu.my/web/guest/mylibrary - click eDocument) 
502 |a Thesis (Bachelor of Engineering-Electronic), UNISEL, 2005 
504 |a Includes bibliographical references and appendix 
610 2 |a Universiti Industri Selangor  
650 0 0 |a NAND gate --   |x characteristics  
650 0 0 |a CMOS scaling  
997 |a Engineering, Faculty  |b Engineering, Department 
998 |a Electronics Engineering, Degree 
999 |a THE0000510  |b THESIS  |c THESIS  |e Thesis Room, Bestari Jaya